DocumentCode

1071199

Title

TP-A6 the behavior of Schottky barriers to GaAs as a function of annealing temperature

Author

Hovel, H.J. ; Lanza, C.

Volume

27

Issue

11

fYear

1980

fDate

11/1/1980 12:00:00 AM

Firstpage

2190

Lastpage

2190

Keywords

Annealing; Crystallization; Gallium arsenide; Molecular beam epitaxial growth; Schottky barriers; Silicides; Silicon; Substrates; Temperature; Tungsten;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1980.20213

Filename

1481006