Title :
Effects of impurities on photocarrier mobility in Bi12SiO20
Author :
Sluss, J.J., Jr. ; Tayag, T.J. ; Batchman, T.E.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oklahoma Univ., Norman, OK, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
The impurity content and photocarrier mobility of commercially-grown Bi12SiO20 was characterised. The mobilities were 0.12 cm2/V-s and 0.04 cm2/V-s for samples containing the lowest and highest impurity content, respectively. The difference in mobility is attributed to the formation of deep trapping levels, which is consistent with photocarrier transport dominated by hopping conduction
Keywords :
bismuth compounds; carrier mobility; deep levels; hopping conduction; photoconducting materials; photorefractive materials; Bi12SiO20; commercially-grown; deep trapping levels; hopping conduction; impurity content; photocarrier mobility; photocarrier transport; photorefractive materials;
Journal_Title :
Optoelectronics, IEE Proceedings J
