Title :
A Ka-band 3-bit RF MEMS true-time-delay network
Author :
Hacker, Jonathan B. ; Mihailovich, Robert E. ; Kim, Moonil ; DeNatale, Jeffrey F.
Author_Institution :
Rockwell Sci. Center, USA
fDate :
1/1/2003 12:00:00 AM
Abstract :
A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-μm-thick GaAs substrate. The compact 9.1-mm2 TTD network was designed to produce flat delay time over a dc-to-40-GHz bandwidth with full 360° phase control at 45° intervals at 35 GHz. Measurements show a match to within 2% to the designed delay times at 35 GHz for all eight switch states with 2.2-dB average insertion loss over all states. Peak rms phase error is 2.28° and peak rms amplitude error is 0.28 dB from dc to 40 GHz. Return loss better than 15 dB from dc to 40 GHz for all eight states confirms the circuit´s broad-band operation.
Keywords :
microswitches; phase shifters; 0 to 40 GHz; 15 dB; 2.2 dB; 3 bit; GaAs; GaAs substrate; Ka-band; RF MEMS true-time-delay network; insertion loss; metal-to-metal contact switch; monolithic switched-line network; phase shifter; return loss; Bandwidth; Circuits; Computer hacking; Delay; Gallium arsenide; PHEMTs; Phase shifters; Radar antennas; Radiofrequency microelectromechanical systems; Switches;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2002.806508
