Title :
WP-A3 Application of CW argon laser annealing on fabricating short-channel PolySilicon-gate MOSFET´s
Author :
Palkuti, L.J. ; Teng, T.C. ; Skinner, C.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Annealing; Argon; Diodes; Electron beams; Laser sintering; Leakage current; Scanning electron microscopy; Silicon; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20238
