Title :
Discussion of the relaxation oscillation frequency in Ga(Al)As quantum well laser structures
Author :
Hochholzer, M. ; Harth, W.
Author_Institution :
Lehrstuhl fur Allgemeine Elektron., Tech. Univ. Munchen, Germany
fDate :
10/1/1995 12:00:00 AM
Abstract :
The dependence of the relaxation oscillation frequency on the main laser device parameters as the number of quantum wells, well width, threshold modal gain and optical confinement is systematically investigated in GaAs/GaAlAs multiquantum well laser structures. The theoretical results are well confirmed by detailed measurements on ridge waveguide laser structures
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; laser theory; optical waveguide theory; quantum well lasers; ridge waveguides; waveguide lasers; Ga(Al)As quantum well laser structures; GaAs-AlGaAs; GaAs/GaAlAs multiquantum well laser structures; main laser device parameters; optical confinement; quantum well width; relaxation oscillation frequency; ridge waveguide laser structures; threshold modal gain;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19952183
