• DocumentCode
    1072017
  • Title

    Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs

  • Author

    Asbeck, P.M. ; Tandon, J. ; Welch, B.M. ; Evans, C.A., Jr. ; Deline, V.R.

  • Author_Institution
    Rockwell International Electronics Research Center, Thousand Oaks, CA
  • Volume
    1
  • Issue
    3
  • fYear
    1980
  • fDate
    3/1/1980 12:00:00 AM
  • Firstpage
    35
  • Lastpage
    37
  • Abstract
    The redistribution of Cr is shown to be responsible for the formation of deep trails in the electron density profiles of certain semi-insulating GaAs substrates following Se ion implantation and annealing, and for the formation of spurious n-type conducting layers in those substrates following encapsulation with Si3N4and annealing without implantation.
  • Keywords
    Annealing; Chromium; Electric variables; Electrons; Fabrication; Gallium arsenide; Impurities; Insulation; Substrates; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25221
  • Filename
    1481083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072017