DocumentCode :
1072291
Title :
On the stability of MIS solar cells
Author :
Kleta, J.K. ; Pulfrey, D.L.
Author_Institution :
University of British Columbia, Vancouver, Canada
Volume :
1
Issue :
6
fYear :
1980
fDate :
6/1/1980 12:00:00 AM
Firstpage :
107
Lastpage :
109
Abstract :
To achieve good photocurent response in Al/SiOx/pSi MIS solar cells it is necessary to keep the Al barrier metal thickness to ≈ 50 Å. It is demonstrated that such solar cells are unstable, principally in Voc. The reduction in Vocis shown to be induced by photons of wavelength ≤ 4500 Å. MIS cell stability can be improved, at the expense of efficiency, by thickening the barrier metal to 100 Å.
Keywords :
Aluminum; Artificial intelligence; Conductivity; Fabrication; Fingers; Photovoltaic cells; Silicon; Stability; Substrates; Sun;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1980.25248
Filename :
1481110
Link To Document :
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