Stripe-geometry In
1-xGa
xP
1-zAs
z(

) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs
1-yP
ysubstrates, are described that operate (CW, 77 K) in the visible at

Å with differential quantum efficiency

percent and power output in the range 1-7 mW.