Title :
Correction to: "50-110 GHz Gunn diodes using molecular beam epitaxy."
Author :
Haydl, W.H. ; Smith, Roy S. ; Bosch, Ricard
Author_Institution :
Institut für Angewandte Festkorperphysik der Fraunhofergesellschaft, Freiburg, West Germany
Abstract :
Page 225, column 1, line 6 of the above-named work (ibid., Vol EDL-1, No. 10, pp. 224-226, 0ct. 1980), should read: "Typical threshold current values were 0.5-1.5 amps with the operating current 10-40% below this value."
Keywords :
Diodes; Electron beams; Gunn devices; Molecular beam epitaxial growth; Threshold current;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25315
