DocumentCode
1073262
Title
High-performance quasi-optical GaAs monolithic mixer at 110 GHz
Author
Clifton, Brian J. ; Alley, Gary D. ; Murphy, R. Allen ; Mroczkowski, Isabel H.
Author_Institution
Massachusetts Institute of Technology, Lexington, MA
Volume
28
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
155
Lastpage
157
Abstract
A novel GaAs monolithic integrated circuit mixer has been fabricated which is impedance matched to fundamental waveguide. It consists of a slot coupler, coplanar transmission line, surface-oriented Schottky-barrier diode, and RF bypass capacitor monolithically integrated on the GaAs surface. At 110 GHz, a monolithic mixer module mounted in the end of a waveguide horn has an uncooled double-sideband (DSB) mixer noise temperature of 339 K and conversion loss of 3.8 dB.
Keywords
Capacitors; Coupling circuits; Gallium arsenide; Metallization; Millimeter wave integrated circuits; Monolithic integrated circuits; Radio frequency; Schottky diodes; Surface impedance; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20302
Filename
1481454
Link To Document