Title :
GaAs FET large-signal model and its application to circuit designs
Author :
Tajima, Yusuke ; Wrona, Beverly ; Mishima, Katsuhiko
Author_Institution :
Raytheon Research Division, Waltham, MA
fDate :
2/1/1981 12:00:00 AM
Abstract :
A large-signal GaAs FET model is derived based on dc characteristics of the device. Analytical expressions of modeled nonlinear elements are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large-signal model is demonstrated.
Keywords :
Circuit synthesis; Distortion measurement; Equivalent circuits; FETs; Frequency; Gallium arsenide; Oscillators; Power amplifiers; Scattering parameters; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20306
