Title :
Dual-gate GaAs FET switches
Author :
Vorhaus, James L. ; Fabian, Walter ; Ng, Paul B. ; Tajima, Yusuke
Author_Institution :
Raytheon Research Division, Waltham, MA
fDate :
2/1/1981 12:00:00 AM
Abstract :
A set of multi-pole, multi-throw switch devices consisting of dual-gate GaAs FET´s is described. Included are single-pole, single-throw (SPST), double-pole, double-throw (DPDT), and single-pole four-throw (SP4T) switches. Device fabrication and measurement techniques are discussed. The device models for these switches were derived based on an equivalent circuit of a duff-gate FET. The devices were found to have substantial gain in X-band and low Ku-band.
Keywords :
Fabrication; Fingers; Gallium arsenide; Low-noise amplifiers; Microwave FETs; Microwave devices; P-i-n diodes; Radio frequency; Switches; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20312