Title :
Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application
Author :
Jiyong Woo ; Daeseok Lee ; Euijun Cha ; Sangheon Lee ; Sangsu Park ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.
Keywords :
copper; switches; Cu; bidirectional selectors; bidirectional-bipolar current-voltage characteristics; complementary atom switch; conduction behavior; conductive filament control; conductive filament instability; cross-point selector device application; leakage current; switch elements; Arrays; Atomic measurements; Electrodes; Ions; Materials; Resistance; Switches; Selector device; access device; atom switch; cross-point array memory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2290120