• DocumentCode
    107338
  • Title

    Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

  • Author

    Jiyong Woo ; Daeseok Lee ; Euijun Cha ; Sangheon Lee ; Sangsu Park ; Hyunsang Hwang

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
  • Volume
    35
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    60
  • Lastpage
    62
  • Abstract
    We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.
  • Keywords
    copper; switches; Cu; bidirectional selectors; bidirectional-bipolar current-voltage characteristics; complementary atom switch; conduction behavior; conductive filament control; conductive filament instability; cross-point selector device application; leakage current; switch elements; Arrays; Atomic measurements; Electrodes; Ions; Materials; Resistance; Switches; Selector device; access device; atom switch; cross-point array memory;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2290120
  • Filename
    6674044