Title :
Comparative frequency behavior of GaAs, InP, and GaInAs transferred electron devices—Derivation of a simple comparative criterion
Author :
Rolland, P.A. ; Salmer, G. ; Constant, E. ; Fauquembergue, R.
Author_Institution :
Universite des Sciences et Techniques de Lille 1, Villeneuve d´´Ascq Cedex, France
fDate :
3/1/1981 12:00:00 AM
Abstract :
A comparison between the intrinsic frequency dependence of transferred electron effects in GaAs, InP, and GaInAs is presented. A simple, comparative, criterion is then derived on the basis of phenomenological Considerations.
Keywords :
Cutoff frequency; Electron mobility; Frequency dependence; Gallium arsenide; Gunn devices; Indium phosphide; Monte Carlo methods; Radio frequency; Semiconductor materials; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20337
