DocumentCode
107378
Title
Endurance Enhancement by Soft Forming Algorithm on AlOx /WOy Resistive Switching Memory Array
Author
Yang-Yang Ma ; Ya-Li Song ; Pei Liu ; Yin-Yin Lin ; Xiao-Hui Huang ; Qing-Tian Zou ; Jin-Gang Wu
Author_Institution
Res. Center of Semicond. Memory & Applic., Fudan Univ., Shanghai, China
Volume
35
Issue
12
fYear
2014
fDate
Dec. 2014
Firstpage
1230
Lastpage
1232
Abstract
A new soft forming algorithm, proposed in this letter, is demonstrated to improve endurance of an AlOx/WOy bilayer resistive random access memory array by two orders of magnitude. Relative to the conventional strong forming algorithm, soft forming creates a thinner conductive filament (CF) by applying voltage pulses that have narrower widths and lower amplitude. The mechanism can be explained by a CF model. soft forming algorithm is beneficial to form a thinner CF, which contains more movable oxygen vacancies (Vo) than that is formed by strong forming method. The rupture of thinner CF requires less movable oxygen ions (O2-). Consequently, exhaustion of movable Vo/O2- slows down and the number of set/reset cycles is increased, which improves endurance of the array.
Keywords
aluminium compounds; forming processes; integrated circuit reliability; oxygen; random-access storage; tungsten compounds; AlOx-WOy; AlOx-WOy bilayer resistive random access memory array; CF model; O2-; conductive filament; movable oxygen vacancies; oxygen ions; set-reset cycles; soft forming algorithm; strong forming algorithm; voltage pulses; Algorithm design and analysis; Random access memory; Tungsten; RRAM; endurance; forming; forming.;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2360511
Filename
6923421
Link To Document