Title :
Automated measurement and analysis of MIS interfaces in narrow-bandgap semiconductors
Author :
Lubzens, Daniel ; Kolodny, A. ; Shacham-Diamand, Yosi J.
Author_Institution :
Technion-Israel Institute of Technology, Haifa, Israel
fDate :
5/1/1981 12:00:00 AM
Abstract :
A computerized system for simultaneous measurement of high-frequency and quasi-static MIS capacitance is described. The importance of this simultaneity in the application of various analysis methods to MIS devices in narrow-bandgap semiconductors is discussed. Results on the interfaces of mercury-cadmium-telluride with zinc sulfide and anodic oxide are given.
Keywords :
Bridge circuits; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Frequency measurement; Hysteresis; MIS devices; Maxwell-Boltzmann distribution; Voltage; Voltmeters;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20380
