Title :
A high brightness GaP multicolor LED
Author :
Yamaguchi, Takao ; Niina, T. ; Niina, Tatsuhiko
Author_Institution :
Sanyo Electric Company, Osaka, Japan
fDate :
5/1/1981 12:00:00 AM
Abstract :
A multicolor LED which can emit red, green, and any other colored light between red and green, such as orange and yellow, has been developed. This new LED is fabricated by growing epitaxially a double junction of red and green light emission on one side of a GaP substrate. The four epitaxial layers of GaP, referred to as n1, p1, p2, and n2, are grown by liquid phase epitaxy on the
Keywords :
Brightness; Displays; Epitaxial growth; Epitaxial layers; Etching; Light emitting diodes; Metalworking machines; Substrates; Tellurium; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20387
