A dynamic average model for the body effect in ion implanted short channel (L = 1µm) MOSFET´s

Analytical modeling of ion implanted short channel MOSFET´s is demonstrated. A dynamic averaging technique is proposed to transform the ion implanted bulk charge distribution into a constant charge and a charge sheet at the Si-SiO2interface, such that the total charge and depletion depth are conserved. This transformation coupled with a two-dimensional gate-source-drain charge-sharing scheme is used to derive an analytical model for ion implanted short channel devices. Experimental data is presented to verify the validity of the model.