Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

Author

Chumin Zhao ; Linsen Bie ; Rui Zhang ; Kanicki, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

75

Lastpage

77

Abstract

In this letter, the electrical properties of bottom-gate and dual gate (DG) amorphous In-Ga-Zn-O (a-IGZO) metal-semiconductor field-effect transistors (MESFETs) are studied by a 2-D numerical simulation. A subgap density of state model is proposed and used in the simulation. The bottom gate MESFET shows field-effect mobility (μFE) of 9 cm²/Vs, threshold voltage (Vth) of -6.3 V, and subthreshold swing of 0.12 V/decade. The DG a-IGZO MESFET structure is suggested to effectively increase the device operational current (Ion).

Keywords

Schottky gate field effect transistors; gallium; indium; numerical analysis; oxygen; zinc; In-Ga-Zn-O; bottom-gate amorphous metal-semiconductor field-effect transistors; dual-gate amorphous MESFET; electrical properties; field-effect mobility; operational current; state model; subgap density; subthreshold swing; threshold voltage; two-dimensional numerical simulation; Logic gates; MESFETs; Numerical models; Schottky barriers; Thin film transistors; Threshold voltage; Amorphous In-Ga-Zn-O (a-IGZO); dual-gate (DG); metal-semiconductor field-effect transistor (MESFET); schottky contact;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2289861

Filename

6674056