History dependence of output characteristics of silicon-on-insulator (SOI) MOSFETs

Author

Jenkins, K.A. ; Sun, J.Y.-C. ; Gautier, J.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

17

Issue

1

fYear

1996

Firstpage

7

Lastpage

9

Abstract

It is demonstrated that the drain current overshoot in partially depleted SOI MOSFETs has a significant history dependence or memory effect, even in the absence of impact ionization under low drain biases. The measured output characteristics of partially depleted SOI MOSFETs are shown to be dynamically dependent on their switching history, frequency, and bias conditions, due to the finite time constants of carrier generation (thermal or impact ionization) and recombination in the floating body.

Keywords

MOSFET; characteristics measurement; electron-hole recombination; impact ionisation; silicon-on-insulator; SOI MOSFETs; bias conditions; carrier generation; drain current overshoot; finite time constants; floating body; impact ionization; memory effect; output characteristics; partially depleted transistors; recombination; switching history; thermal ionization; FETs; Frequency measurement; History; Impact ionization; MOSFET circuits; Pulse measurements; Silicon on insulator technology; Sun; Time measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.475560

Filename

475560