Title :
Thermal characterization of thermally-shunted heterojunction bipolar transistors
Author :
Sewell, J. ; Liou, L.L. ; Barlage, D. ; Barrette, J. ; Bozada, C. ; Dettmer, R. ; Fitch, R. ; Jenkins, T. ; Lee, R. ; Mack, M. ; Trombley, G. ; Watson, P.
Author_Institution :
Solid State Electron. Directorate, Wright Lab., Wright-Patterson AFB, OH, USA
Abstract :
Heterojunction Bipolar Transistors (HBTs) are potentially useful in a number of microwave applications, but they are severely limited by a current distribution instability caused by electrothermal interaction and the use of a low thermal conductivity substrate. A novel thermal management technique called "thermal shunting" has been developed to reduce thermal resistance and junction temperature non-uniformity. Thermal resistance measurements for thermally-shunted devices are presented. Specific thermal resistance measurements as low as 2.6×10/sup -4//spl deg/C-cm2/W (147/spl deg/C/W at 0.1 W for a device with a 177 μm2 emitter area) have been obtained. Thermal resistance values obtained for thermally-shunted HBTs are substantially lower than those reported for conventional HBTs.
Keywords :
heterojunction bipolar transistors; thermal resistance; current distribution instability; electrothermal interaction; heterojunction bipolar transistors; junction temperature nonuniformity; microwave applications; thermal management; thermal resistance; thermal shunting; Bipolar transistors; Fingers; Heterojunction bipolar transistors; Lenses; Microwave devices; Temperature; Thermal conductivity; Thermal lensing; Thermal management; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
