DocumentCode :
1074761
Title :
Rotating MNOS disk memory device
Author :
Iwamura, Soichi ; Nishida, Yasuaki ; Hashimoto, Kazuhiko
Author_Institution :
Nippon Hoso Kyokai, Tokyo, Japan
Volume :
28
Issue :
7
fYear :
1981
fDate :
7/1/1981 12:00:00 AM
Firstpage :
854
Lastpage :
860
Abstract :
This paper presents a new recording and reproducing system using a disk-type charging medium, i.e., a rotating MNOS disk memory device, which consists of a single stationary ´metal´ electrode and an ´NOS´ disk rotating in contact with it. This is capable of reading information immediately after writing it, and also capable of easily rewriting part or all of the written information without aid of any physical or chemical processing, by overlay-recording new information over the old, as well as permitting the recording of information at a very high density. This type of electrically erasable memory has the potential for storing a bit of information in an area of less than 1 µm2. Using a prototype disk made of a 3-in-diameter silicon wafer, we recently demonstrated a single-field TV memory.
Keywords :
Capacitors; Chemical processes; Disk recording; Electrodes; Optical films; Optical recording; Semiconductor films; Silicon; TV; Writing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20442
Filename :
1481594
Link To Document :
بازگشت