Title :
Ultra-wideband monolithic photoreceivers using HBT-compatible HPTs with novel base circuits, and simultaneously integrated with an HBT amplifier
Author :
Kamitsuna, Hideki
Author_Institution :
NTT Wireless Syst. Labs., Kanagawa, Japan
fDate :
12/1/1995 12:00:00 AM
Abstract :
This paper presents two kinds of monolithically integrated ultra-wideband photoreceivers that use HBT-compatible HPTs with novel base circuits. The HPT photoreceiver, which consists of an HPT with an inductor and series resistor base circuit, yields ultra-broadband operation with 3 dB bandwidth from 0.43-12.1 GHz and over 11 dB gain compared to a photodiode with identical quantum efficiency. The HPT/HBT photoreceiver, which consists of an HPT with an inductor at the base terminal followed by an HBT amplifier circuit, yields ultra-wideband operation from 8.5-20.5 GHz (bandwidth of 12 GHz) with over 20 dB gain. The bandwidths of these photoreceivers are state-of-the art for monolithically integrated photoreceivers using HPT/HBT structures. The proposed photoreceivers, which are based on mature MMIC technologies, offer several other remarkable features such as good design accuracy and extremely small chip size
Keywords :
III-V semiconductors; MMIC; aluminium compounds; broadband networks; gallium arsenide; integrated optoelectronics; optical receivers; 0.43 to 12.1 GHz; 11 dB; 20 dB; 8.5 to 20.5 GHz; AlGaAs-GaAs; AlGaAs-GaAs photoreceivers; HBT amplifier; HBT-compatible HPTs; HPT photoreceiver; HPT/HBT photoreceiver; MMIC technologies; base circuits; extremely small chip size; good design accuracy; inductor; monolithically integrated; quantum efficiency; series resistor base circuit; ultra-broadband operation; ultra-wideband monolithic photoreceivers; Art; Bandwidth; Gain; Heterojunction bipolar transistors; Inductors; Integrated circuit yield; Operational amplifiers; Photodiodes; Resistors; Ultra wideband technology;
Journal_Title :
Lightwave Technology, Journal of
