DocumentCode :
1075444
Title :
Degradation of refresh time in dynamic MOS RAM by irradiation of alpha particles
Author :
Yoshihara, Tsutomu ; Takano, Satoshi ; Kimata, Masafumi ; Nakano, Takao
Author_Institution :
Mitsubishi Electric Corporation, Hyogo, Japan
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1198
Lastpage :
1199
Abstract :
Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8.89 × 10-5pA/alpha.
Keywords :
Alpha particles; Capacitance; Capacitors; Current density; Degradation; Electrons; Packaging; Particle measurements; Read-write memory; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20511
Filename :
1481663
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1075444
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