Novel design topology for ultra low power down converters with broadband on chip matching network

Author

Schmatz, Martin L. ; Lott, Urs ; Baumberger, Werner ; Baech, Werner

Author_Institution

Lab. for EM Fields & Microwave Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland

Volume

43

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2946

Lastpage

2951

Abstract

A novel design topology for ultra low power receivers and down converters has been developed. Using this topology, a monolithic L-band down converter consisting of an input amplifier and a double balanced mixer has been implemented with a standard 0.7 μm GaAs-MESFET process. The circuit has a single ended 50 Ω input and differential outputs offering totally more than 40 dB voltage conversion gain at 1 GHz and 30 dB at 2 GHz. It is supplied by a single lithium cell and has a dc power consumption of less than 2.0 mW at 2.7 V. Through a more exact modeling of the parasitic capacitance of n-implanted resistors an improved agreement between measurement and simulation was achieved. Finally, the determination of the noise figure at a high impedance output from a 50 Ω measurement is presented

Keywords

MESFET integrated circuits; MMIC frequency convertors; UHF frequency convertors; impedance matching; network topology; radio receivers; 0.7 micron; 1 to 2 GHz; 2.7 V; 20 mW; 30 to 40 dB; 50 ohm; DC power consumption; GaAs; GaAs-MESFET; broadband on chip matching network; design topology; double balanced mixer; input amplifier; lithium cell; monolithic L-band down converter; n-implanted resistor; noise figure; parasitic capacitance; receiver; ultra low power devices; voltage conversion gain; Capacitance measurement; Circuit topology; Energy consumption; Gain; L-band; Lithium; Parasitic capacitance; Power measurement; Resistors; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.475659

Filename

475659