DocumentCode :
1075498
Title :
I-4 recent advances in molecular beam epitaxy (MBE)
Author :
Cho, Andrew Y.
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1209
Lastpage :
1210
Keywords :
DH-HEMTs; Electron mobility; Gallium arsenide; II-VI semiconductor materials; III-V semiconductor materials; Molecular beam epitaxial growth; Nitrogen; Optical devices; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20517
Filename :
1481669
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1075498
