DocumentCode
1075498
Title
I-4 recent advances in molecular beam epitaxy (MBE)
Author
Cho, Andrew Y.
Volume
28
Issue
10
fYear
1981
fDate
10/1/1981 12:00:00 AM
Firstpage
1209
Lastpage
1210
Keywords
DH-HEMTs; Electron mobility; Gallium arsenide; II-VI semiconductor materials; III-V semiconductor materials; Molecular beam epitaxial growth; Nitrogen; Optical devices; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20517
Filename
1481669
Link To Document