DocumentCode
1075736
Title
Oscillation characteristics in InGaAsP/InP DH lasers with self-aligned structure
Author
Yano, Mitsuhiro ; Nishi, Hiroshi ; Takusagawa, Masahito
Author_Institution
Fujitsu Labs., Nakahara, Kawasaki, Japan
Volume
15
Issue
12
fYear
1979
fDate
12/1/1979 12:00:00 AM
Firstpage
1388
Lastpage
1395
Abstract
This paper presents new stripe geometry InGaAsP/InP DH lasers having mechanisms for suppressing current spreads and for controlling the transverse mode parallel to the junction plane. The theoretical study for optimum design of these lasers from which the analytic method of oscillation characteristics, including control of the transverse mode parallel to the junction plane attributable to refractive index and gain, was derived is discussed. The oscillation characteristics, especially the waveguide properties of the transverse mode are reported. Experimental results show excellent agreement with the theory and show that the transverse mode is totally confined by the built-in passive waveguide for a stripe width of 5 μm.
Keywords
Semiconductor lasers; DH-HEMTs; Geometrical optics; Indium phosphide; Laser modes; Laser theory; Optical control; Optical design; Refractive index; Waveguide lasers; Waveguide theory;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1979.1069955
Filename
1069955
Link To Document