Title :
InAsSb based mid-infrared optical upconversion devices operable at thermoelectric temperatures
Author :
Boucherif, A. ; Ban, D. ; Luo, H. ; Dupont, E. ; Wasilewski, Z.R. ; Liu, H.C. ; Paltiel, Y. ; Raizman, A. ; Sher, A.
Author_Institution :
Univ. of Waterloo, Waterloo
Abstract :
A mid-infrared optical upconverter fabricated by using wafer fusion technology is reported. The device integrates an InAsSb/GaSb photodetector with a GaAs/AlGaAs light emitting diode. Mid-infrared to near infrared optical upconversion was demonstrated with an external upconversion efficiency of 0.06 W/W at 200 K - a temperature attainable with a thermoelectric cooler.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; optical wavelength conversion; photodetectors; thermoelectric devices; thermoelectricity; GaAs-AlGaAs; GaAs/AlGaAs light emitting diode; InAsSb-GaSb; InAsSb/GaSb photodetector; mid-infrared optical upconversion devices; mid-infrared optical upconverter; near infrared optical upconversion; temperature 200 K; thermoelectric cooler; thermoelectric temperatures; wafer fusion technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082782
