Title :
IIIB-6 power devices with Ga implanted base
Author :
Ajima, Toshiyuki ; Ohshima, J. ; Kirita, K. ; Yonezawa, Teru
fDate :
10/1/1981 12:00:00 AM
Keywords :
Fabrication; Gallium; Laboratories; Microwave devices; Molecular beam epitaxial growth; Nitrogen; Schottky diodes; Semiconductor device manufacture; Semiconductor films; Semiconductor impurities;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20547
