DocumentCode :
1075814
Title :
IIIB-7 low barrier height Schottky diode for microwave mixer using super thin Si MBE film
Author :
Ballamy, W.C. ; Ota, Yoshiharu
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1230
Lastpage :
1230
Keywords :
Electron devices; Epitaxial layers; Fabrication; Microwave devices; Molecular beam epitaxial growth; Schottky barriers; Schottky diodes; Semiconductor films; Thermal resistance; Water heating;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20548
Filename :
1481700
Link To Document :
بازگشت