• DocumentCode
    1075907
  • Title

    IVA-7 surface layer impurity accumulation due to evaporation of GaAs during annealing

  • Author

    Woodall, J. ; Wicks, G. ; Rupprecht, H.

  • Volume
    28
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    1235
  • Lastpage
    1235
  • Keywords
    Annealing; Chemical vapor deposition; Crystals; Electron mobility; Gallium arsenide; Impurities; Silicon carbide; Substrates; Surface morphology; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20557
  • Filename
    1481709