DocumentCode :
1076020
Title :
Superconducting Properties of MgB2: Polycarbosilane Versus Conventional Nano-SiC Doping
Author :
Shcherbakova, O.V. ; Pan, A.V. ; Wexler, D. ; Dou, S.X.
Author_Institution :
Univ. of Wollongong, Wollongong
Volume :
17
Issue :
2
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
2790
Lastpage :
2793
Abstract :
The effect of polycarbosilane (PCS) doping on the superconducting properties of MgB2 was systematically investigated. Highly reactive C and Si appeared after PCS decomposition facilitating incorporation of C into the MgB2 lattice, as well as the reaction between Si and Mg, resulting in formation of a large number of small Mg2Si particles within MgB2 grains. C-substitution induced crystal lattice defects and impurities act as strong pinning centers, significantly improving Jc(Ba) performance in the high field region. The differences in the effects of SiC and PCS doping have been studied and are described to the structural transformation that occurs in MgB2 after doping with these two materials.
Keywords :
critical current density (superconductivity); doping; flux pinning; impurities; magnesium compounds; organic compounds; silicon compounds; solid-state phase transformations; MgB2:SiC; crystal lattice defects; decomposition; impurities; nanoSiC doping; pinning centers; polycarbosilane doping; structural transformation; superconducting material; Australia; Chemical elements; Doping; Lattices; Oxidation; Personal communication networks; Powders; Silicon carbide; Superconducting materials; Temperature;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2007.898950
Filename :
4278269
Link To Document :
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