DocumentCode :
1076070
Title :
VA-7 GaAs planar doped barrier transistors
Author :
Malik, R.J. ; Hollis, Mark A. ; Eastman, L.F. ; Woodard, D.W. ; Wood, C.E.C. ; Aucoin, T.R.
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1246
Lastpage :
1246
Keywords :
Acceleration; Electron emission; FETs; Frequency; Gallium arsenide; Heterojunctions; Laboratories; Molecular beam epitaxial growth; Pollution measurement; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20572
Filename :
1481724
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1076070
