Title :
Electron-beam lithography for small MOSFET´s
Author :
Watts, Roderick Kent ; Fichtner, Wolfgang ; Fuls, E.N. ; Thibault, Louis R. ; Johnston, Ralph L.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
fDate :
11/1/1981 12:00:00 AM
Abstract :
Electron-beam lithography with a novel multilevel resist structure together with two-dimensional process and device modeling and dry processing with reactive sputter etching have been employed to produce silicon-gate NMOS devices with micrometer and submicrometer channel lengths. Results for transistors and ring oscillators are reported.
Keywords :
Amorphous silicon; Coordinate measuring machines; Electron beams; Etching; Lithography; MOS devices; MOSFETs; Resists; Surfaces; Writing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20611
