DocumentCode :
1076675
Title :
Internal photoemission in Ag-Al2 O3 -Al junctions
Author :
Guedes, J. M Pinto ; Slayman, Charles W. ; Gustafson, T. Kenneth ; Jain, Ravinder K.
Author_Institution :
Univ. of California, Berkeley, CA, USA
Volume :
15
Issue :
6
fYear :
1979
fDate :
6/1/1979 12:00:00 AM
Firstpage :
475
Lastpage :
481
Abstract :
We report a detailed study of the magnitude of the photon-induced current in Ag-Al2 O3 -Al metal-oxide-metal junctions as a function of photon energy and angle of incident radiation. Experimental observations and a theory based on vacuum photoemission are found to be in good agreement. Fast risetimes ( 
ns) and linearity of the photocurrent with respect to incident power up to at least 10 kW/cm2are also reported.
ns) and linearity of the photocurrent with respect to incident power up to at least 10 kW/cm2are also reported.Keywords :
MBM devices; Photoemission; Area measurement; Charge carrier processes; Charge measurement; Current measurement; Energy measurement; Photoconductivity; Photoelectricity; Position measurement; Q measurement; Thickness measurement;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1979.1070041
Filename :
1070041
Link To Document :
