Title :
Quaternary AIInGaN-based photodetectors
Author :
Jhou, Y.D. ; Chang, S.J. ; Su, Y.K. ; Chen, C.H. ; Lee, H.C. ; Liu, C.H. ; Lee, Y.Y.
Author_Institution :
Inst. of Microelectron. & Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860degC. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature was increased while Al composition ratio was much less temperature dependent. Furthermore, it was found that solar-blind metal-insulator-semiconductor photodetectors with AlInGaN layer prepared at 860degC could provide us a photocurrent-to-dark-current contrast ratio of 1.93X104 and a UV-to-visible rejection ratio of 38.0.
Keywords :
III-V semiconductors; MIS devices; MOCVD; aluminium compounds; dark conductivity; gallium compounds; indium compounds; photodetectors; semiconductor epitaxial layers; wide band gap semiconductors; AlGaInN; GaN-Al2O3; UV-to-visible rejection ratio; composition ratio; growth temperature; metalorganic chemical vapour deposition; photocurrent-to-dark-current contrast ratio; quaternary epitaxial layer; sapphire substrates; solar-blind metal-insulator-semiconductor photodetectors; temperature 860 degC;
Journal_Title :
Optoelectronics, IET
DOI :
10.1049/iet-opt:20070020
