DocumentCode
1077136
Title
Continuously clocked 1 GHz GaAs CCD
Author
Deyhimy, I. ; Hill, W.A. ; Anderson, R.J.
Author_Institution
Vedette Energy Research, Inc., Newbury Park, CA
Volume
2
Issue
3
fYear
1981
fDate
3/1/1981 12:00:00 AM
Firstpage
70
Lastpage
72
Abstract
The continuously clocked operation of a buried channel, Schottky-barrier gate GaAs CCD is described at clock frequencies in excess of 1 GHz. A charge transfer efficiency of >0.9999 per transfer is measured at low frequency and 0.994 per transfer at 1 GHz. It is postulated that the high frequency transfer efficiency is a limitation of the equipment.
Keywords
Charge coupled devices; Charge measurement; Charge transfer; Charge-coupled image sensors; Clocks; Current measurement; Frequency measurement; Gallium arsenide; Silicon; Surface acoustic wave devices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1981.25344
Filename
1481828
Link To Document