• DocumentCode
    1077136
  • Title

    Continuously clocked 1 GHz GaAs CCD

  • Author

    Deyhimy, I. ; Hill, W.A. ; Anderson, R.J.

  • Author_Institution
    Vedette Energy Research, Inc., Newbury Park, CA
  • Volume
    2
  • Issue
    3
  • fYear
    1981
  • fDate
    3/1/1981 12:00:00 AM
  • Firstpage
    70
  • Lastpage
    72
  • Abstract
    The continuously clocked operation of a buried channel, Schottky-barrier gate GaAs CCD is described at clock frequencies in excess of 1 GHz. A charge transfer efficiency of >0.9999 per transfer is measured at low frequency and 0.994 per transfer at 1 GHz. It is postulated that the high frequency transfer efficiency is a limitation of the equipment.
  • Keywords
    Charge coupled devices; Charge measurement; Charge transfer; Charge-coupled image sensors; Clocks; Current measurement; Frequency measurement; Gallium arsenide; Silicon; Surface acoustic wave devices;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25344
  • Filename
    1481828