DocumentCode
1077320
Title
GaInAsP/InP DH lasers and related fabricating techniques for integration
Author
Iga, Kenichi ; Kambayashi, Toshio ; Wakao, Kiyohide ; Moriki, Kazunori ; Kitahara, Chiyuki ; Wakao, K. ; Moriki, Kenta ; Kitahara, C.
Author_Institution
Tokyo Institute of Technology, Midoriku, Yokohama, Japan
Volume
15
Issue
8
fYear
1979
fDate
8/1/1979 12:00:00 AM
Firstpage
707
Lastpage
710
Abstract
Liquid phase epitaxy and wet chemical etching techniques were investigated for the purpose of obtaining integrated Gax In1-x Asy P1-y /InP lasers. Selective growth of a GaInAsP layer on channeled
Keywords
Chemical lasers; DH-HEMTs; Etching; Fiber lasers; Indium phosphide; Laser modes; Optical device fabrication; Substrates; Surface emitting lasers; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1979.1070100
Filename
1070100
Link To Document