DocumentCode :
1077513
Title :
P-N junction and Schottky barrier diode fabrication in laser recrystallized polysilicon on SiO2
Author :
Shah, R.R. ; Hollingsworth, D.R. ; DeJong, G.A. ; Crosthwait, D.L. ; Crosthwait, D.L.
Author_Institution :
Texas Instruments Inc., Dallas, Texas
Volume :
2
Issue :
7
fYear :
1981
fDate :
7/1/1981 12:00:00 AM
Firstpage :
159
Lastpage :
161
Abstract :
P-N junction and Schottky barrier diodes have been fabricated in laser recrystallized polycrystalline silicon on SiO2. A repetitively Q-switched Nd3+:YAG laser was used to anneal polysilicon deposited by LPCVD on oxide thermally grown on
Keywords :
Annealing; Metallization; Optical device fabrication; P-n junctions; Pulsed laser deposition; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor lasers; Silicon;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1981.25382
Filename :
1481866
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1077513
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