Title :
MNOS/CCD nonvolatile analog memory
Author :
Withers, R.S. ; Silversmith, D.J. ; Mountain, R.W.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
fDate :
7/1/1981 12:00:00 AM
Abstract :
MNOS storage sites have been integrated with an n-channel CCD to produce a nonvolatile memory capable of storing sampled analog signals. Analog signals, sampled at the CCD input, are stored as trapped charge in the MNOS dielectric and may be replicated nondestructively after four days of storage with a linear dynamic range of 33 dB.
Keywords :
Analog memory; Charge coupled devices; Clocks; Dynamic range; Fabrication; Nonvolatile memory; Silicon; Tunneling; Voltage; Writing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25384
