Title :
The probability for ballistic electron motion in n-GaAs
Author_Institution :
GTE Laboratories, Waltham, MA, USA
fDate :
7/1/1981 12:00:00 AM
Abstract :
By choosing the value of P = e+1as a probability criterion, ballistic electron motion in n-GaAs devices is investigated. The scattering processes due to optical phonons, intervalley phonons of Γ &rarr L and Γ → X and acoustic phonons are included in the calculations. The relation between the length of the active region and the applied voltage at 77°K and 300°K is discussed. This provides a guide to ballistic electron device design.
Keywords :
Acceleration; Acoustic devices; Acoustic scattering; Electron optics; High speed optical techniques; Optical scattering; Phonons; Poisson equations; Temperature dependence; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25385
