DocumentCode
1077993
Title
InAs–InP (1.55- μm Region) Quantum-Dot Microring Lasers
Author
Hill, Martin T. ; Anantathanasarn, S. ; Zhu, Y. ; Oei, Y.-S. ; van Veldhoven, P.J. ; Smit, M.K. ; Nötzel, R.
Author_Institution
Eindhoven Univ. of Technol., Eindhoven
Volume
20
Issue
6
fYear
2008
fDate
3/15/2008 12:00:00 AM
Firstpage
446
Lastpage
448
Abstract
In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguides are made from InGaAsP-InP (100) material suitable for active-passive photonic integrated circuits. Lasing in rings down to 22 mum in diameter is found, with a threshold current of 12.5 mA.
Keywords
II-VI semiconductors; indium compounds; integrated optics; quantum dot lasers; ring lasers; semiconductor quantum dots; active-passive photonic integrated circuits; current 12.5 mA; electrically pumped continuous-wave lasing; quantum-dot microring lasers; Laser excitation; Optical materials; Photonic integrated circuits; Pump lasers; Quantum dots; Ring lasers; Telecommunications; Temperature; Threshold current; Waveguide lasers; Integrated optics; microring lasers; quantum dots (QDs); semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2008.916963
Filename
4455661
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