Title :
Planar Gunn-type triode oscillator at 83 GHz
Author :
Khalid, A. ; Dunn, G.M. ; Pilgrim, N. ; Stanley, C.R. ; Thayne, I.G. ; Holland, M. ; Cumming, D.R.S.
Author_Institution :
Univ. of Glasgow, Glasgow
Abstract :
A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography. Oscillation occurs at 83 GHz for a 0.5 mum gate length device with a 1.3 mum gate-cathode separation. Experimental results are in excellent agreement with Monte Carlo calculations. Planar Gunn triodes have potential for high frequency chip integration for millimetre-wave and terahertz applications.
Keywords :
Gunn oscillators; millimetre wave oscillators; Monte Carlo calculation; Planar Gunn triode oscillator; chip integration; electron beam lithography; frequency 83 GHz; gate-cathode separation; millimetre-wave Gunn triode device; millimetre-wave application; molecular beam epitaxy and; oscillation; quantum well structure; size 0.5 mum; size 1.3 mum; terahertz application;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071099
