DocumentCode :
1078092
Title :
The effect of collisional broadening on Monte Carlo simulations of high-field transport in semiconductor devices
Author :
Capasso, F. ; Pearsall, T.P. ; Thornber, K.K.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Volume :
2
Issue :
11
fYear :
1981
fDate :
11/1/1981 12:00:00 AM
Firstpage :
295
Lastpage :
297
Abstract :
Some important consequences of the uncertainty principle on Monte Carlo simulations of very high field transport are discussed. It is shown that recent values of the phonon scattering rates reported for GaAs by Shichijo and Hess lead to an unrealistically high collisional broadening (0.3-0.6eV) of the electronic states, thus rendering questionable any attempt to relate transport properties to the band structure, and invalidating the semiclassical Boltzmann transport picture used in the Monte Carlo simulation. These considerations are important in the modeling of very high field transport properties in semiconductor devices.
Keywords :
Boltzmann equation; Conductors; Electrons; Gallium arsenide; Ionization; Monte Carlo methods; Particle scattering; Phonons; Semiconductor devices; Uncertainty;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1981.25439
Filename :
1481923
Link To Document :
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