Title :
High power 875 nm Al-free laser diodes
Author :
Plano, W.E. ; Major, J.S., Jr. ; Welch, D.F.
Author_Institution :
SDI Inc., San Jose, CA, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
Data are presented on Al-free InGaAsP-GaAs single quantum well laser diodes operating at 875 nm. Total output powers in excess of 4 W are achieved from a 100 μm broad area gain-guided device. Threshold currents under 200 A/cm2 are reported for diodes operated continuous wave (cw) at room temperature (20/spl deg/C).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; 100 mum; 20 C; 4 W; 875 nm; Al-free laser diodes; CW lasers; InGaAsP-GaAs; InGaAsP-GaAs single quantum well laser diodes; broad area gain-guided device; continuous wave; high power; room temperature; threshold currents; total output powers; Composite materials; Diode lasers; Gallium arsenide; Lattices; Optical materials; Photonics; Power generation; Surface emitting lasers; Testing; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
