DocumentCode :
1078285
Title :
A batch-fabricated silicon capacitive pressure transducer with low temperature sensitivity
Author :
Lee, Yong S. ; Wise, Kensall D.
Author_Institution :
University of Michigan, Ann Arbor, MI
Volume :
29
Issue :
1
fYear :
1982
fDate :
1/1/1982 12:00:00 AM
Firstpage :
42
Lastpage :
48
Abstract :
A batch-fabricated solid-state capacitive pressure transducer has been developed using silicon integrated-circuit technology. The fabricated devices exhibit a dynamic range of 350 mmHg and a pressure sensitivity of about 1100 ppm/mmHg. The temperature coefficient of zero-pressure offset is about +50 ppm/°C (less than 0.05 mmHg/°C) and the temperature coefficient of pressure sensitivity over the -20 to +50°C temperature span is about +275 ppm/°C (less than 0.04 mmHg/°C) when the device is used with an open or vacuum-sealed reference cavity. These temperature coefficients are substantially lower than those of previously reported monolithic devices and are low enough that expensive temperature trims can be eliminated for many applications.
Keywords :
Capacitive sensors; Piezoresistance; Piezoresistive devices; Resistors; Robotics and automation; Silicon; Solid state circuits; Temperature dependence; Temperature sensors; Transducers;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20656
Filename :
1482153
Link To Document :
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