Title :
High Pressure Operation of the Photon-Assisted Cascaded Electron Multiplier
Author :
Amaro, F.D. ; Veloso, J.F.C.A. ; dos Santos, J.M.F. ; Breskin, A. ; Chechik, R. ; Lyashenko, A.
Author_Institution :
Phys. Dept., Univ. of Coimbra, Coimbra
fDate :
6/1/2009 12:00:00 AM
Abstract :
We present the operation of the recently introduced Photon Assisted Cascaded Electron Multiplier (PACEM) in xenon at high pressure. The PACEM is a multi step electron multiplier where the VUV electroluminescence produced in the electron avalanches is used for signal propagation: the VUV electroluminescence produced in the first element of the cascade induces the emission of photoelectrons from a CsI photocathode placed on the top-surface of the second element. These photoelectrons are further multiplied, via charge avalanche. A metallic mesh electrode placed between the first and the second elements of the cascade completely blocks the charge transfer between them. Optical gains of 103 were achieved in xenon at atmospheric pressure, dropping to 25 at 3.3 bar, for applied voltages of 700 and 1100 V, respectively. Taking into account the subsequent charge multiplication, total gains are higher than those obtained with a triple GEM and double THGEM.
Keywords :
charge exchange; electroluminescence; electron avalanches; electron multiplier detectors; high-pressure effects; photocathodes; photomultipliers; position sensitive particle detectors; CsI photocathode; MHSP; PACEM; VUV electroluminescence; charge multiplication; charge transfer; double THGEM; electron avalanches; high pressure operation; metallic mesh electrode; micro hole and strip plate; multistep electron multiplier; photon-assisted cascaded electron multiplier; signal propagation; triple GEM; voltage 700 V to 1100 V; xenon; Cathodes; Detectors; Electroluminescence; Electron multipliers; Gamma ray detection; Gases; Particle beam optics; Physics; Voltage; Xenon; Electron multipliers; gas detectors; noble gases; photocathodes;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2010396