DocumentCode :
1078815
Title :
Size-dependent output power saturation of vertical-cavity surface-emitting laser diodes
Author :
Wipiejewski, T. ; Peters, M.G. ; Thibeault, B.J. ; Young, D.B. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
8
Issue :
1
fYear :
1996
Firstpage :
10
Lastpage :
12
Abstract :
We demonstrate efficient vertical-cavity surface-emitting laser diodes with high output power levels. Improved output power in these pillar-etched devices is achieved through a 60% lower thermal resistance by using a 15-μm-thick Au-plated heat spreading layer on the top surface with a size of 300×300 μm2. The maximum continous wave output power increases almost linearly with laser diameter, before it saturates at 42 mW for an unmounted Au-plated device of 64-μm diameter. A simple analytical model describes the laser output characteristics and the size-dependent saturation behavior of the maximum output power.
Keywords :
semiconductor lasers; surface emitting lasers; thermal resistance; 42 mW; Au; Au-plated heat spreading layer; continous wave lasing; output power saturation; pillar-etched devices; thermal resistance; vertical-cavity surface-emitting laser diodes; Diode lasers; Etching; Heat sinks; Laser modes; Power generation; Power lasers; Surface emitting lasers; Surface resistance; Thermal resistance; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.475761
Filename :
475761
Link To Document :
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