DocumentCode
1079111
Title
Feature size limit of liftoff metallization technology
Author
Homma, Yoshio ; Yajima, Akio ; Harada, Seiki
Author_Institution
Hitachi, Ltd., Kokubunji, Tokyo, Japan
Volume
29
Issue
4
fYear
1982
fDate
4/1/1982 12:00:00 AM
Firstpage
512
Lastpage
517
Abstract
The feature size limits for liftoff metallization technology are evaluated both experimentally and by computer simulation following Blech´s model. The mechanism producing a smoothly sloped metallization pattern profile was also clarified. The simulation reveals that the average slope angle of the metallization pattern sidewalls is determined by the reverse mask topology, metallization thickness, and the maximum incident angle of the evaporation system used for the metallization deposition. Simulation results showed good coincidence with experimental results. It is shown that the average slope angle can be controlled between 20° and 70° with polyimide liftoff technology. Feature size limit, i.e., the minimum pitch of metallization patterns, is determined by the reverse mask topology and the maximum incident angle as well as by mechanical and chemical properties of the polyimide layer, but is independent of metallization thickness. In a sample application of the technology in the fabrication of interconnections on rugged LSI surfaces, the minimum pitch of the polyimide liftoff metallization patterns was estimated to be 2.6 µm.
Keywords
Chemical technology; Computer simulation; Fabrication; Large scale integration; Metallization; Polyimides; Resists; Semiconductor films; Sputter etching; Topology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20735
Filename
1482232
Link To Document