• DocumentCode
    1079111
  • Title

    Feature size limit of liftoff metallization technology

  • Author

    Homma, Yoshio ; Yajima, Akio ; Harada, Seiki

  • Author_Institution
    Hitachi, Ltd., Kokubunji, Tokyo, Japan
  • Volume
    29
  • Issue
    4
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    512
  • Lastpage
    517
  • Abstract
    The feature size limits for liftoff metallization technology are evaluated both experimentally and by computer simulation following Blech´s model. The mechanism producing a smoothly sloped metallization pattern profile was also clarified. The simulation reveals that the average slope angle of the metallization pattern sidewalls is determined by the reverse mask topology, metallization thickness, and the maximum incident angle of the evaporation system used for the metallization deposition. Simulation results showed good coincidence with experimental results. It is shown that the average slope angle can be controlled between 20° and 70° with polyimide liftoff technology. Feature size limit, i.e., the minimum pitch of metallization patterns, is determined by the reverse mask topology and the maximum incident angle as well as by mechanical and chemical properties of the polyimide layer, but is independent of metallization thickness. In a sample application of the technology in the fabrication of interconnections on rugged LSI surfaces, the minimum pitch of the polyimide liftoff metallization patterns was estimated to be 2.6 µm.
  • Keywords
    Chemical technology; Computer simulation; Fabrication; Large scale integration; Metallization; Polyimides; Resists; Semiconductor films; Sputter etching; Topology;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20735
  • Filename
    1482232