Title :
DICE: A Beneficial Short-Channel Effect in Nanoscale Double-Gate MOSFETs
Author :
Chouksey, Siddharth ; Fossum, Jerry G.
Author_Institution :
Univ. of Florida, Gainesville
fDate :
3/1/2008 12:00:00 AM
Abstract :
Physics-based compact modeling, supported by numerical simulations, is used to show the significance of "drain-induced charge enhancement" (DICE) in nanoscale double-gate (DG) MOSFETs. DICE, which is the strong-inversion counterpart of drain-induced barrier lowering (DIBL), is shown to significantly benefit drive current, without affecting the gate capacitance much, and hence can improve nanoscale DG CMOS speed substantially.
Keywords :
MOSFET; electric current; nanoelectronics; numerical analysis; semiconductor device models; DICE; drain-induced barrier lowering factor; drain-induced charge enhancement; drive current; nanoscale double-gate MOSFET; numerical simulations; physics-based compact modeling; short-channel effect; Analytical models; Capacitance; FinFETs; MOSFETs; Nanoscale devices; Numerical models; Numerical simulation; Poisson equations; Semiconductor device modeling; Threshold voltage; Drain-induced barrier lowering (DIBL); FinFET; physical compact model; short-channel effects; velocity overshoot;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.914835
